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DMN55D0UT
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5) Continuous
Pulsed Drain Current (Note 5)
Symbol
V DSS
V GSS
I D
I DM
Value
50
± 12
160
560
Units
V
V
mA
mA
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
200
625
-55 to +150
Units
mW
° C/W
° C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV DSS
I DSS
I GSS
50
?
?
?
?
?
?
1
1.0
5.0
V
μ A
μ A
V GS = 0V, I D = 250 μ A
V DS = 50V, V GS = 0V
V GS = ± 8V, V DS = 0V
V GS = ± 12V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V GS(th)
R DS (ON)
g FS
0.7
?
?
180
0.8
3.1
4
?
1.0
4
5
?
V
Ω
mS
V DS = V GS , I D = 250 μ A
V GS = 4V, I D = 100mA
V GS = 2.5V, I D = 80mA
V DS = 10V, I D = 100mA, f = 1.0KHz
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
25
?
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
?
?
5
2.1
?
?
pF
pF
V DS = 10V, V GS = 0V, f = 1.0MHz
Notes:
5. Device mounted on FR-4 PCB, pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
DMN55D0UT
Document number: DS31330 Rev. 5 - 2
2 of 5
www.diodes.com
December 2012
? Diodes Incorporated
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